On-Film Formation of Bi Nanowires with Extraordinary Electron Mobility

Authors
Shim, WooyoungHam, JinheeLee, Kyoung-ilJeung, Won YoungJohnson, MarkLee, Wooyoung
Issue Date
2009-01
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.9, no.1, pp.18 - 22
Abstract
A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 degrees C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diameter-tunable Bi nanowires can be produced b