Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

Authors
Son, Dong-IckKim, Ji-HwanPark, Dong-HeeChoi, Won KookLi, FushanHam, Jung HunKim, Tae Whan
Issue Date
2008-02-06
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.19, no.5
Abstract
The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles + PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles + PVK]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices.
Keywords
LIGHT-EMITTING-DIODES; ELECTRICAL-PROPERTIES; MEMORY CELLS; QUANTUM-DOT; NANOCRYSTALS; BISTABILITY; MECHANISM; SYSTEM; LIGHT-EMITTING-DIODES; ELECTRICAL-PROPERTIES; MEMORY CELLS; QUANTUM-DOT; NANOCRYSTALS; BISTABILITY; MECHANISM; SYSTEM; Organic bistability; CdSe/ZnS quantum dot; nonvolatile memory
ISSN
0957-4484
URI
https://pubs.kist.re.kr/handle/201004/133740
DOI
10.1088/0957-4484/19/05/055204
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KIST Article > 2008
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