Spin-polarized hot electron injection into two-dimensional electron gas by magnetic tunnel transistor

Authors
Tae, GikoanEom, JonghwaSong, JindongKim, Kwangyoun
Issue Date
2007-12
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.12, pp.7717 - 7719
Abstract
A magnetic tunnel transistor has been fabricated on top of a modulation-doped GaAs/AlGaAs heterostructure that provides a high-mobility two-dimensional electron gas. The emitter and base of the magnetic tunnel transistor consisted of a ferromagnetic metal, whereas the collector consisted of the two-dimensional electron gas. Spin polarized hot electrons from the emitter were filtered by the CoFe base layer and then injected into the collector, leading to a finite magnetocurrent ratio. The magnetocurrent ratio decreased as the hot electron energy was increased by increasing the bias voltage between the emitter and the base above a certain threshold voltage. We observed magnetocurrent ratios of similar to 27% at 17 K and similar to 2% at 300 K, indicating that spin-polarized hot electrons are injected into the two-dimensional electron gas from 17 K up to room temperature.
Keywords
ROOM-TEMPERATURE; MAGNETOCURRENT; ROOM-TEMPERATURE; MAGNETOCURRENT; magnetic tunnel transistor; magnetocurrent; spin injection; hot electron
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/133953
DOI
10.1143/JJAP.46.7717
Appears in Collections:
KIST Article > 2007
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