Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, S. I. | - |
dc.contributor.author | Yeo, H. Y. | - |
dc.contributor.author | Yun, I. | - |
dc.contributor.author | Leem, J. Y. | - |
dc.contributor.author | Han, I. K. | - |
dc.contributor.author | Kim, J. S. | - |
dc.contributor.author | Lee, J. I. | - |
dc.date.accessioned | 2024-01-21T00:31:30Z | - |
dc.date.available | 2024-01-21T00:31:30Z | - |
dc.date.created | 2021-09-02 | - |
dc.date.issued | 2007-10 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/134080 | - |
dc.description.abstract | We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | TEMPERATURE-DEPENDENCE | - |
dc.subject | GROWTH | - |
dc.subject | INGAAS | - |
dc.title | Size distribution effects on self-assembled InAs quantum dots | - |
dc.type | Article | - |
dc.identifier.doi | 10.1007/s10854-007-9205-9 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.18, pp.S191 - S194 | - |
dc.citation.title | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.citation.volume | 18 | - |
dc.citation.startPage | S191 | - |
dc.citation.endPage | S194 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000248803300038 | - |
dc.identifier.scopusid | 2-s2.0-34547590341 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | TEMPERATURE-DEPENDENCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | INGAAS | - |
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