Size distribution effects on self-assembled InAs quantum dots
- Authors
- Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I.
- Issue Date
- 2007-10
- Publisher
- SPRINGER
- Citation
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.18, pp.S191 - S194
- Abstract
- We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
- Keywords
- MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GROWTH; INGAAS; MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GROWTH; INGAAS
- ISSN
- 0957-4522
- URI
- https://pubs.kist.re.kr/handle/201004/134080
- DOI
- 10.1007/s10854-007-9205-9
- Appears in Collections:
- KIST Article > 2007
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