Fabrication of stabilized piezoelectric thick film for silicon-based MEMS device

Authors
Kwon, T. Y.Kim, Y. B.Eom, K.Yoon, D. S.Lee, H. L.Kim, T. S.
Issue Date
2007-09
Publisher
SPRINGER HEIDELBERG
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.88, no.4, pp.627 - 632
Abstract
Electrical properties of piezoelectric thick films with controlled microstructure were investigated. In order to enhance the electromechanical properties (e.g. d(31), d(33)) of a thick film by control of its microstructure, a mixed powder, referred to as BNP, consisting of both nano-sized and micro-sized piezoelectric particles, was employed as a starting precursor in the film fabrication process. According to a scanning electron microscopy study, it is shown that a BNP thick film exhibits the densest homogeneous microstructures. According to surface area measurements, the BNP thick film was sufficiently densified without an additional infiltration process of Pb(Zr1-xTix)O-3 sol for densification. The screen-printed BNP thick film possesses a dielectric constant and a remanent polarization much higher than those of a thick film composed of only micro-sized piezoelectric particles by a factor of more than two. This suggests the potential application of the BNP thick film, in conjunction with a silicon substrate, to a micromachined monolithic PZT thick film device on the silicon substrate.
Keywords
PZT; SENSORS; MICROCANTILEVER; STRESS; PZT; SENSORS; MICROCANTILEVER; STRESS; piezoelectric thick film; electromechanical properties
ISSN
0947-8396
URI
https://pubs.kist.re.kr/handle/201004/134170
DOI
10.1007/s00339-007-4025-6
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KIST Article > 2007
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