Temperature dependence of resistance switching in cr doped SrZrO3 thin films

Abstract

The temperature dependence of resistive switching of Cr 0.2at%-doped SrZrO3 (Cr:SZO) thin films grown on SrRuO3/Si(100) substrates by using radio frequency sputtering has been studied over the temperature range between 300 K and 10 K. The film has a polycrystalline structure. Good and reproducible ON and OFF resistive switching is observed. While the low-resistance ON state show a metallic behavior, the high-resistance OFF current shows a thermal activation behavior. Using an Arrhenius plot, we estimated the barrier height of the initial (before forming) and the OFF states to be similar to 24.2 meV and similar to 2.14 meV, respectively.