탑 게이트 탄소나노튜브 트랜지스터 특성 연구

Abstract

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in aconventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conductionchannel separated from the channel by a thin SiO2as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics,including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs maybe competitive with Si MOSFET for future nanoelectronic applications.Key Woods :CNTFETs, MOSFET, CVD, conductance, nanoelectronic1. . ....... (carbon nanotubes, CNTs). ... .... ..... ... 1991. ... ... (S.Iijima)... ...[1-2] .. ... ...... .