Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Abstract

Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a SiO2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the Cu/SiO2/Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance. (c) 2007 American Institute of Physics.