Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

Abstract

. Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of similar to 100 mn. We show that these data have direct implications for device performance associated with the injection current.