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dc.contributor.author유영채-
dc.contributor.author이정일-
dc.contributor.author김경찬-
dc.contributor.author김은규-
dc.contributor.author김길호-
dc.contributor.author한일기-
dc.date.accessioned2024-01-21T02:32:14Z-
dc.date.available2024-01-21T02:32:14Z-
dc.date.created2021-09-06-
dc.date.issued2006-09-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/135168-
dc.description.abstractMOCVD로 성장된 InGaAs 양자점을 이용하여 1.5 ㎛의 발광파장을 갖는 고휘도 발광소자 (Superluminescent diode, SLD)를 제작하였다. 상온에서 SLD의 광출력은 CW 3 mW 였고, 3­dB 파장대역폭은 55 nm 이었다-
dc.publisher한국진공학회-
dc.title1.5 mm InGaAs/InGaAsP/InP 양자점 Superluminescent Diode의 광 특성-
dc.title.alternativeOptical characteristic of 1.5 mm InGaAs/InGaAsP/InP QD Superluminescent Diode-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitationApplied Science and Convergence Technology, v.15, no.5, pp.493 - 498-
dc.citation.titleApplied Science and Convergence Technology-
dc.citation.volume15-
dc.citation.number5-
dc.citation.startPage493-
dc.citation.endPage498-
dc.identifier.kciidART001204936-
dc.subject.keywordAuthorInGaAs/InGaAsP/InP QD-
dc.subject.keywordAuthorPhotoluminescence-
dc.subject.keywordAuthorElectroluminescence-
dc.subject.keywordAuthorSuperluminescent Diode-
dc.subject.keywordAuthor고휘도 발광소자-
dc.subject.keywordAuthorInGaAs/InGaAsP/InP 양자점-
dc.subject.keywordAuthor레이저 다이오드-
dc.subject.keywordAuthor광 루미네센스-
dc.subject.keywordAuthorInGaAs/InGaAsP/InP QD-
dc.subject.keywordAuthorPhotoluminescence-
dc.subject.keywordAuthorElectroluminescence-
dc.subject.keywordAuthorSuperluminescent Diode-
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