The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Abstract

The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood. (c) 2005 Elsevier B.V. All rights reserved.