Ferromagnetism in 200-MeV Ag+15-ion-irradiated Co-implanted ZnO thin films

Authors
Angadi, BJung, YSChoi, WKKumar, RJeong, KShin, SWLee, JHSong, JHKhan, MWSrivastava, JP
Issue Date
2006-04-03
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.88, no.14
Abstract
Structural, electrical resistivity, and magnetization properties of 200-MeV Ag+15-ion-irradiated Co-implanted ZnO thin films are presented. The structural studies show the presence of Co clusters whose size is found to increase with increase of Co implantation. The implanted films were irradiated with 200-MeV Ag+15 ions to fluence of 1x10(12) ions/cm(2). The Co clusters on irradiation dissolve in the ZnO matrix. The electrical resistivity of the irradiated samples is lowered to half. The magnetization hysteresis measurements show ferromagnetic behavior at 300 K, and the coercive field increases with the Co implantation. The ferromagnetism at room temperature is confirmed by magnetic force microscopy measurements. The results are explained on the basis of the close interplay between the electrical and the magnetic properties. (c) 2006 American Institute of Physics.
Keywords
DOPED ZNO; ROOM-TEMPERATURE; DOPED ZNO; ROOM-TEMPERATURE; ZnO; Ferromagnetism; Co-implantation; swift heavy ion; dilute magnetic semiconductor
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/135593
DOI
10.1063/1.2192577
Appears in Collections:
KIST Article > 2006
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