Full metadata record
| DC Field | Value | Language | 
|---|---|---|
| dc.contributor.author | Yi, H | - | 
| dc.contributor.author | Koo, HC | - | 
| dc.contributor.author | Kim, WY | - | 
| dc.contributor.author | Chang, JY | - | 
| dc.contributor.author | Han, SH | - | 
| dc.contributor.author | Lim, SH | - | 
| dc.date.accessioned | 2024-01-21T05:03:46Z | - | 
| dc.date.available | 2024-01-21T05:03:46Z | - | 
| dc.date.created | 2021-09-03 | - | 
| dc.date.issued | 2005-05-15 | - | 
| dc.identifier.issn | 0021-8979 | - | 
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/136464 | - | 
| dc.description.abstract | A spin device composed of two ferromagnetic electrodes and InAs two-dimensional electron gas was fabricated. Submicron spin channels were defined to enhance spin transport characteristics. Electrical transport measurement was performed to detect spin-polarized electrons. In potentiometric geometry a voltage change, Delta V=0.17 mV, sensed by a ferromagnetic electrode was obtained at 5 and 77 K. In the nonlocal method Delta V=0.057 mV, which resulted from accumulated spin-polarized electrons, was obtained at 77 K. The main reason for theses large signals is that the short and narrow spin channels increase the possibility for spin-polarized electrons to arrive at the spin detector. (c) 2005 American Institute of Physics. | - | 
| dc.language | English | - | 
| dc.publisher | AMER INST PHYSICS | - | 
| dc.subject | INJECTION | - | 
| dc.subject | SEMICONDUCTOR | - | 
| dc.subject | INTERFACE | - | 
| dc.title | Spin transport in an InAs based two-dimensional electron gas nanochannel | - | 
| dc.type | Article | - | 
| dc.identifier.doi | 10.1063/1.1852213 | - | 
| dc.description.journalClass | 1 | - | 
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.97, no.10 | - | 
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - | 
| dc.citation.volume | 97 | - | 
| dc.citation.number | 10 | - | 
| dc.description.journalRegisteredClass | scie | - | 
| dc.description.journalRegisteredClass | scopus | - | 
| dc.identifier.wosid | 000230168300222 | - | 
| dc.identifier.scopusid | 2-s2.0-20844463843 | - | 
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - | 
| dc.relation.journalResearchArea | Physics | - | 
| dc.type.docType | Article; Proceedings Paper | - | 
| dc.subject.keywordPlus | INJECTION | - | 
| dc.subject.keywordPlus | SEMICONDUCTOR | - | 
| dc.subject.keywordPlus | INTERFACE | - | 
| dc.subject.keywordAuthor | spin FET | - | 
| dc.subject.keywordAuthor | InAs | - | 
| dc.subject.keywordAuthor | nanochannel | - | 
| dc.subject.keywordAuthor | spin transport | - | 
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.