Spin transport in an InAs based two-dimensional electron gas nanochannel
- Authors
- Yi, H; Koo, HC; Kim, WY; Chang, JY; Han, SH; Lim, SH
- Issue Date
- 2005-05-15
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.97, no.10
- Abstract
- A spin device composed of two ferromagnetic electrodes and InAs two-dimensional electron gas was fabricated. Submicron spin channels were defined to enhance spin transport characteristics. Electrical transport measurement was performed to detect spin-polarized electrons. In potentiometric geometry a voltage change, Delta V=0.17 mV, sensed by a ferromagnetic electrode was obtained at 5 and 77 K. In the nonlocal method Delta V=0.057 mV, which resulted from accumulated spin-polarized electrons, was obtained at 77 K. The main reason for theses large signals is that the short and narrow spin channels increase the possibility for spin-polarized electrons to arrive at the spin detector. (c) 2005 American Institute of Physics.
- Keywords
- INJECTION; SEMICONDUCTOR; INTERFACE; INJECTION; SEMICONDUCTOR; INTERFACE; spin FET; InAs; nanochannel; spin transport
- ISSN
- 0021-8979
- URI
- https://pubs.kist.re.kr/handle/201004/136464
- DOI
- 10.1063/1.1852213
- Appears in Collections:
- KIST Article > 2005
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