Spin transport in an InAs based two-dimensional electron gas nanochannel

Authors
Yi, HKoo, HCKim, WYChang, JYHan, SHLim, SH
Issue Date
2005-05-15
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.97, no.10
Abstract
A spin device composed of two ferromagnetic electrodes and InAs two-dimensional electron gas was fabricated. Submicron spin channels were defined to enhance spin transport characteristics. Electrical transport measurement was performed to detect spin-polarized electrons. In potentiometric geometry a voltage change, Delta V=0.17 mV, sensed by a ferromagnetic electrode was obtained at 5 and 77 K. In the nonlocal method Delta V=0.057 mV, which resulted from accumulated spin-polarized electrons, was obtained at 77 K. The main reason for theses large signals is that the short and narrow spin channels increase the possibility for spin-polarized electrons to arrive at the spin detector. (c) 2005 American Institute of Physics.
Keywords
INJECTION; SEMICONDUCTOR; INTERFACE; INJECTION; SEMICONDUCTOR; INTERFACE; spin FET; InAs; nanochannel; spin transport
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/136464
DOI
10.1063/1.1852213
Appears in Collections:
KIST Article > 2005
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