Modeling and initial growth mode of ultrathin film on the basis of electrical conductivity of substrate

Authors
Song, SKKoh, SKLee, DYSong, KMBaik, HK
Issue Date
2004-09
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.43, no.9A, pp.6452 - 6456
Abstract
A model for the electrical conductance of a semiconductive substrate with an average thickness is proposed for a region of initial growth before the appearance of a tunneling effect. Based on this model, we propose 6 different growth modes according to the film thickness, measuring in stitu electrical conductivity. As the film thickness increased, the island size was constant and then increased, while the number of islands first increased and then decreased. The proposed model may be useful for in situ study of the growth of ultrathin films prior to the onset of tunneling conductance.
Keywords
INDIUM TIN OXIDE; THIN-FILMS; IN-SITU; GROWING FILMS; METAL-FILMS; DEPOSITION; BEAM; ELLIPSOMETRY; SPECTROSCOPY; TRANSITION; INDIUM TIN OXIDE; THIN-FILMS; IN-SITU; GROWING FILMS; METAL-FILMS; DEPOSITION; BEAM; ELLIPSOMETRY; SPECTROSCOPY; TRANSITION; electrical conductance; initial growth; 6 different growth modes; in situ electrical conductivity
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/137284
DOI
10.1143/JJAP.43.6452
Appears in Collections:
KIST Article > 2004
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