Molecular dynamics simulation at the early stage of thin-film deposition: Al or Co on Co(111)

Authors
Kim, SPLee, SCLee, KRChung, YC
Issue Date
2004-06
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.43, no.6B, pp.3818 - 3821
Abstract
The growth mechanisms at the early stage of thin-film deposition were quantitatively investigated using the molecular dynamics method, focusing on the cases of Al and Co on an fcc-Co(111) system. In the case of Al on Co(111), Al adatoms were grown basically in the layer-by-layer growth mode. Moreover, this growth behavior became more obvious with increasing substrate temperature from 80 K to 300 K. In the case of Co on Co(111), Co adatoms apparently favored the island growth mode at a low incident energy. By increasing the energy, however, the tendency towards the layer-by-layer growth mode highly increased. These could be explained by the difference in surface diffusion barrier between the two cases.
Keywords
TEMPERATURE EPITAXIAL-GROWTH; SURFACE; TEMPERATURE EPITAXIAL-GROWTH; SURFACE; magnetic nano meter thin-films; molecular dynamics simulation; Co-Al; thin-film growth
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/137553
DOI
10.1143/JJAP.43.3818
Appears in Collections:
KIST Article > 2004
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