Spin transport in an FM/Bi/FM junction
- Authors
- Lee, KI; Jeun, MH; Chang, JY; Han, SH; Ha, JG; Lee, WY
- Issue Date
- 2004-06
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.7, pp.1510 - 1513
- Abstract
- The spin transport in a spin-valve device incorporating Bi thin film and two ferromagnetic (FM) contacts is presented. The non-local output voltage is found to depend upon the relative magnetization state of the two FM electrodes, indicating that the spin-polarized electrons are injected from the first FM (injector) into Bi and are detected by the second FM (detector) due to spin accumulation. The observed Hanle effect supports the spin injection and detection in our device. 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.
- Keywords
- INJECTION; MAGNETORESISTANCE; MAGNETIZATION; INJECTION; MAGNETORESISTANCE; MAGNETIZATION; spin injection; Hanle effect; semimetal; bismuth
- ISSN
- 0370-1972
- URI
- https://pubs.kist.re.kr/handle/201004/137573
- DOI
- 10.1002/pssb.200304562
- Appears in Collections:
- KIST Article > 2004
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.