Spin transport in an FM/Bi/FM junction

Authors
Lee, KIJeun, MHChang, JYHan, SHHa, JGLee, WY
Issue Date
2004-06
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.7, pp.1510 - 1513
Abstract
The spin transport in a spin-valve device incorporating Bi thin film and two ferromagnetic (FM) contacts is presented. The non-local output voltage is found to depend upon the relative magnetization state of the two FM electrodes, indicating that the spin-polarized electrons are injected from the first FM (injector) into Bi and are detected by the second FM (detector) due to spin accumulation. The observed Hanle effect supports the spin injection and detection in our device. 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.
Keywords
INJECTION; MAGNETORESISTANCE; MAGNETIZATION; INJECTION; MAGNETORESISTANCE; MAGNETIZATION; spin injection; Hanle effect; semimetal; bismuth
ISSN
0370-1972
URI
https://pubs.kist.re.kr/handle/201004/137573
DOI
10.1002/pssb.200304562
Appears in Collections:
KIST Article > 2004
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