Local Hall effect in a hybrid InSb cross junction

Abstract

We present the local Hall effect in a hybrid Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single microstructured ferromagnetic element. A clear hysteresis loop was found to appear in the output signal for the cross junction with a ferromagnetic element due to the strong perpendicular component of the magnetic fringe field emanating from the edge of the ferromagnet. We demonstrate that the local fringe field from the ferromagnetic element inducing a Hall voltage improves the Hall sensitivity (4.5 Omega/Oe). (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.