Efficient incorporation of the ti component with a novel titanium diolate complex in the CVD of Ba(1-x)SrxTiO(3) thin films
- Authors
- Lee, JS; Hong, SH; Woo, KJ; Lee, WI
- Issue Date
- 2004-03
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- CHEMICAL VAPOR DEPOSITION, v.10, no.2, pp.67 - +
- Abstract
- A novel titanium precursor with extended air stability and volatility is demonstrated to facilitate an efficient incorporation of the titanium component for the MOCVD of BST films. In addition to the favourable stability and volatility characteristics, the new white crystalline complex [Ti(mpd)(mdop)(mu-OMe)](2) (Figure) has a thermal decomposition behavior comparable to those of the Ba and Sr precursors used for the deposition BST thin films from a cocktail of the three metal precursors in toluene.
- Keywords
- CHEMICAL-VAPOR-DEPOSITION; STRONTIUM-TITANATE FILMS; DIRECT LIQUID INJECTION; ACCOMMODATION; PRECURSORS; VOLATILE; (BA; CHEMICAL-VAPOR-DEPOSITION; STRONTIUM-TITANATE FILMS; DIRECT LIQUID INJECTION; ACCOMMODATION; PRECURSORS; VOLATILE; (BA; CVD(chemical vapor deposition); Ti precursor; thin film; metal-organic; BST film; Ti component
- ISSN
- 0948-1907
- URI
- https://pubs.kist.re.kr/handle/201004/137827
- DOI
- 10.1002/cvde.200304161
- Appears in Collections:
- KIST Article > 2004
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