Electron-exchange processes between a hydrogen negative ion and thin aluminum films
- Authors
- Gainullin, IK; Usman, EY; Song, YW; Urazgildin, IF
- Issue Date
- 2003-11-24
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- VACUUM, v.72, no.3, pp.263 - 268
- Abstract
- The interaction between a hydrogen negative ion with the system involving two closely spaced thin aluminum films has been studied. The electron was shown to tunnel first to the nearest film and, then, to the remote film. The population function for each film oscillates in time. The oscillation period depends on a potential-barrier height, which specifies the electron-transition rate. The wave-packet-propagation method used in the calculations makes it possible to obtain the spatial distribution for the electron-localization probability in addition to principal integral characteristics of the transition. (C) 2003 Published by Elsevier Ltd.
- Keywords
- PROJECTED BAND-GAP; CHARGE-TRANSFER; FRONT; PROJECTED BAND-GAP; CHARGE-TRANSFER; FRONT; charge exchange; thin Al films
- ISSN
- 0042-207X
- URI
- https://pubs.kist.re.kr/handle/201004/138076
- DOI
- 10.1016/j.vacuum.2003.07.001
- Appears in Collections:
- KIST Article > 2003
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