Electron-exchange processes between a hydrogen negative ion and thin aluminum films

Authors
Gainullin, IKUsman, EYSong, YWUrazgildin, IF
Issue Date
2003-11-24
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
VACUUM, v.72, no.3, pp.263 - 268
Abstract
The interaction between a hydrogen negative ion with the system involving two closely spaced thin aluminum films has been studied. The electron was shown to tunnel first to the nearest film and, then, to the remote film. The population function for each film oscillates in time. The oscillation period depends on a potential-barrier height, which specifies the electron-transition rate. The wave-packet-propagation method used in the calculations makes it possible to obtain the spatial distribution for the electron-localization probability in addition to principal integral characteristics of the transition. (C) 2003 Published by Elsevier Ltd.
Keywords
PROJECTED BAND-GAP; CHARGE-TRANSFER; FRONT; PROJECTED BAND-GAP; CHARGE-TRANSFER; FRONT; charge exchange; thin Al films
ISSN
0042-207X
URI
https://pubs.kist.re.kr/handle/201004/138076
DOI
10.1016/j.vacuum.2003.07.001
Appears in Collections:
KIST Article > 2003
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