Magnetotransport in (Ga,Mn)N ferromagnetic semiconductors grown by plasma-enhanced molecular beam epitaxy

Abstract

We present the, ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase-with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Rudennan-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.