Microstructure and microwave dielectric properties of (1-x)Ba(Co1/3Nb2/3)O-3-xBa(Zn1/3Nb2/3)O-3 ceramics

Authors
Ahn, CWNahm, SYoon, SJPark, HMLee, HJ
Issue Date
2003-11
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.11, pp.6964 - 6968
Abstract
The microstructure and microwave dielectric properties of (1 - x)Ba(Co1/3Nb2/3)O-3-xBa(Zn1/3Nb2/3)O-3 [(1 - x)BCN-xBZN] ceramics with 0.0 less than or equal to x less than or equal to 1.0 were investigated. When the sintering temperature was 1400degreesC, a homogeneous phase with a I : 2 ordered structure was found in the specimens with x less than or equal to 0.3 but for the specimens with x greater than or equal to 0.6, a disordered structure and BaNb6O16 second phase were found. The grain growth related to the BaNb6O16 second phase occurred in the specimens with x greater than or equal to 0.5. The temperature coefficient of the resonant frequency (tau(f)) increased with increasing x, and the specimens with 0.3 less than or equal to x less than or equal to 0.4 have zero tau(f). Dielectric constant (epsilon(f)) increased with the increase in x and was about 34.5 when x = 0.3. For the specimens with x less than or equal to 0.3, the Q x f value was high but decreased as x exceeded 0.3. The maximum Q x f value, 97,000 GHz, was obtained for 0.7BCN-0.3BZN ceramics sintered at 1400degreesC for 20h.
Keywords
TEMPERATURE; TEMPERATURE; Ba(Zn1/3Nb2/3)O-3; Ba(Co1/3Nb2/3)O-3; microstructure; microwave dielectric properties
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/138132
DOI
10.1143/JJAP.42.6964
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KIST Article > 2003
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