DSpace at KISTKIST Article2003

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dc.contributor.authorPark, HS-
dc.contributor.authorYi, JC-
dc.contributor.authorByun, YT-
dc.date.accessioned2024-01-21T08:13:23Z-
dc.date.available2024-01-21T08:13:23Z-
dc.date.created2022-01-10-
dc.date.issued2003-09-
dc.identifier.issn0951-3248-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138273-
dc.description.abstractSingle mode depleted p-n InGaAsP/InP ridge waveguide phase modulators have been fabricated and investigated at 1.55mum. The phase modulation efficiency of the device was characterized by using the Fabry-Perot resonance method with a tunable laser. The measured phase modulation efficiency for a 2 mm long device was determined as high as 34 deg/V(.)mm for TE mode. This value corresponds to the highest experimental electrooptic modulation efficiency reported so far for InGaAsP/InP p-n phase modulators at the said wavelength region.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.titleInvestigation of the modulation efficiency of depleted InGaAsP/InP ridge waveguide phase modulators at 1.55 mu m-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationCOMPOUND SEMICONDUCTORS 2002, v.174, pp.435 - 438-
dc.citation.titleCOMPOUND SEMICONDUCTORS 2002-
dc.citation.volume174-
dc.citation.startPage435-
dc.citation.endPage438-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000222970500097-
dc.identifier.scopusid2-s2.0-10444285325-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordAuthorPhase modulator-
dc.subject.keywordAuthorInGaAsP/InP-
dc.subject.keywordAuthorModulation efficiency-
dc.subject.keywordAuthorridge waveguide-
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