Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lee, JM | - |
dc.contributor.author | Lee, KI | - |
dc.contributor.author | Chang, JY | - |
dc.contributor.author | Ham, MH | - |
dc.contributor.author | Huh, KS | - |
dc.contributor.author | Myoung, JM | - |
dc.contributor.author | Hwang, WJ | - |
dc.contributor.author | Shin, MW | - |
dc.contributor.author | Han, SH | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Lee, WY | - |
dc.date.accessioned | 2024-01-21T08:13:49Z | - |
dc.date.available | 2024-01-21T08:13:49Z | - |
dc.date.created | 2021-09-03 | - |
dc.date.issued | 2003-09 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/138281 | - |
dc.description.abstract | The magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (T-c), providing T-c approximate to 550 K and T-c approximate to 700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magneto-resistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2003 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | MOLECULAR-BEAM-EPITAXY | - |
dc.subject | DILUTED MAGNETIC SEMICONDUCTORS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.title | Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/S0167-9317(03)00311-3 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.69, no.2-4, pp.283 - 287 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 69 | - |
dc.citation.number | 2-4 | - |
dc.citation.startPage | 283 | - |
dc.citation.endPage | 287 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000185725300026 | - |
dc.identifier.scopusid | 2-s2.0-0141858716 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | MOLECULAR-BEAM-EPITAXY | - |
dc.subject.keywordPlus | DILUTED MAGNETIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordAuthor | diluted magnetic semiconductor | - |
dc.subject.keywordAuthor | carrier-mediated ferromagnetism | - |
dc.subject.keywordAuthor | wide bandgap ferromagnetic semiconductor | - |
dc.subject.keywordAuthor | negative magnetoresistance | - |
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