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dc.contributor.authorLee, JM-
dc.contributor.authorLee, KI-
dc.contributor.authorChang, JY-
dc.contributor.authorHam, MH-
dc.contributor.authorHuh, KS-
dc.contributor.authorMyoung, JM-
dc.contributor.authorHwang, WJ-
dc.contributor.authorShin, MW-
dc.contributor.authorHan, SH-
dc.contributor.authorKim, HJ-
dc.contributor.authorLee, WY-
dc.date.accessioned2024-01-21T08:13:49Z-
dc.date.available2024-01-21T08:13:49Z-
dc.date.created2021-09-03-
dc.date.issued2003-09-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138281-
dc.description.abstractThe magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x=0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy have been investigated. Ferromagnetic ordering for the GaMnN is clearly seen in the temperature range 4-300 K. The M-T curves were fitted with theoretical equations based on the mean field theory in order to estimate Curie temperature (T-c), providing T-c approximate to 550 K and T-c approximate to 700 K, respectively, for the (Ga,Mn)N films with x=0.16% and x=0.50%. Temperature dependence of sheet resistance is found to show negative magneto-resistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2003 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectMOLECULAR-BEAM-EPITAXY-
dc.subjectDILUTED MAGNETIC SEMICONDUCTORS-
dc.subjectROOM-TEMPERATURE-
dc.titleFerromagnetic ordering of n-type (Ga,Mn)N epitaxial films-
dc.typeArticle-
dc.identifier.doi10.1016/S0167-9317(03)00311-3-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMICROELECTRONIC ENGINEERING, v.69, no.2-4, pp.283 - 287-
dc.citation.titleMICROELECTRONIC ENGINEERING-
dc.citation.volume69-
dc.citation.number2-4-
dc.citation.startPage283-
dc.citation.endPage287-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000185725300026-
dc.identifier.scopusid2-s2.0-0141858716-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusMOLECULAR-BEAM-EPITAXY-
dc.subject.keywordPlusDILUTED MAGNETIC SEMICONDUCTORS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordAuthordiluted magnetic semiconductor-
dc.subject.keywordAuthorcarrier-mediated ferromagnetism-
dc.subject.keywordAuthorwide bandgap ferromagnetic semiconductor-
dc.subject.keywordAuthornegative magnetoresistance-
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KIST Article > 2003
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