Epitaxial growth and properties of Bi-substituted yttrium-iron-garnet films grown on (111) gadolinium-gallium-garnet substrates by using rf magnetron sputtering

Authors
Kim, YHKim, JSKim, SILevy, M
Issue Date
2003-09
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.3, pp.400 - 405
Abstract
Epitaxial films of Bi-substituted yttrium iron garnet (BixY3-xFe5O12, BiYIG) have been grown on (111) gadolinium-gallium-garnet substrates, Gd3Ga5O12, by using rf magnetron sputtering. As the film thickness is increased, the film structure varies from a single layer to a double layer due to the stress that develops in the films. A film with a thickness below some critical value has a single layer, which is in a compressive stress state due to the lattice-constant mismatch between the film and the substrate. A film with a thickness above some critical value has a double layer: lower and upper layers. The former is in a compressive stress state like a single-layer film; the latter is unstrained due to the stress relief provided by the formation of misfit dislocations. All the BiYIG films studied here exhibit granular-like surface features with grain sizes of about 50 similar to 200 nm and have surface roughnesses of 0.65 similar to 2.5 urn. The BiYIG films also have in-plane magnetic anisotropy, which is advantageous in the fabrication of planar waveguides.
Keywords
CHEMICAL VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; THIN-FILMS; MAGNETOOPTIC PROPERTIES; ENHANCEMENT; CHEMICAL VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; THIN-FILMS; MAGNETOOPTIC PROPERTIES; ENHANCEMENT; bi-substituted yttrium iron garnet; rf sputtering; epitaxial growth
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/138289
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KIST Article > 2003
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