DSpace at KISTKIST Article2003

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dc.contributor.authorJun, JH-
dc.contributor.authorChoi, DJ-
dc.contributor.authorKim, KH-
dc.contributor.authorOh, KY-
dc.contributor.authorHwang, CJ-
dc.date.accessioned2024-01-21T08:39:29Z-
dc.date.available2024-01-21T08:39:29Z-
dc.date.created2022-01-25-
dc.date.issued2003-06-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138472-
dc.description.abstractThe electrical properties of lanthanum oxide was grown by using metal organic chemical vapor deposition (MOCVD) were investigated from the change of structural properties which occurred during the post-annealing process. The as-grown film had a dielectric constant of 18.8, and capacitance equivalent oxide thickness of 1.7 nm. The leakage current density of the film was measured as 2.4 x 10(-4) A/cm(2) at -1 MV/cm. When the film was annealed at 900degreesC, the dielectric constant decreased with the increase of the interfacial layer. [DOI: 10.1143/JJAP.42.3519].-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.titleEffect of structural properties on electrical properties of lanthanum oxide thin film as a gate dielectric-
dc.typeArticle-
dc.identifier.doi10.1143/JJAP.42.3519-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.6A, pp.3519 - 3522-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.citation.volume42-
dc.citation.number6A-
dc.citation.startPage3519-
dc.citation.endPage3522-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000183927800055-
dc.identifier.scopusid2-s2.0-0042882672-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordAuthorelectrical and structural properties-
dc.subject.keywordAuthorlanthanum oxide-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthordielectric constant-
dc.subject.keywordAuthorleakage current density-
dc.subject.keywordAuthorpost-annealing-
dc.subject.keywordAuthorinterfacial layer-
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