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dc.contributor.authorHeo, DC-
dc.contributor.authorSong, JD-
dc.contributor.authorChoi, WJ-
dc.contributor.authorLee, JI-
dc.contributor.authorJung, JC-
dc.contributor.authorHan, IK-
dc.date.accessioned2024-01-21T08:44:07Z-
dc.date.available2024-01-21T08:44:07Z-
dc.date.created2021-09-03-
dc.date.issued2003-05-29-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138558-
dc.description.abstractThe characteristics of superluminescent diodes (SLDs) using InGaAs quantum dot is presented. In0.5Ga0.5As quantum dot is formed by a short period superlattice of InAs and GaAs. The output power and the spectral width of the SLD are 0.9 W and 80 run, respectively, covering the range 980-1060 nm.-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.titleHigh power broadband InGaAs/GaAs quantum dot superluminescent diodes-
dc.typeArticle-
dc.identifier.doi10.1049/el:20030519-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.39, no.11, pp.863 - 865-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume39-
dc.citation.number11-
dc.citation.startPage863-
dc.citation.endPage865-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000183531300028-
dc.identifier.scopusid2-s2.0-0038001642-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordAuthorsuperluminescent diodes-
dc.subject.keywordAuthorquantum dots-
dc.subject.keywordAuthorHigh power-
dc.subject.keywordAuthorspectral bandwidth-
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