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dc.contributor.authorLee, YH-
dc.contributor.authorKim, DH-
dc.contributor.authorShin, KS-
dc.contributor.authorChoi, CH-
dc.contributor.authorJang, YT-
dc.contributor.authorJu, BK-
dc.date.accessioned2024-01-21T08:44:29Z-
dc.date.available2024-01-21T08:44:29Z-
dc.date.created2021-09-03-
dc.date.issued2003-05-19-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138565-
dc.description.abstractA simple fabrication of gate-controlled nanodevices made of the Co nanodots on tungsten (W)-nanowire templates by using conventional photolithography and a thin film technique is reported. The combined multiple grain nanobridge allows the observation of the Coulomb gap up to a temperature as high as 200 K and shows nonlinear current-voltage characteristics up to 250 K. The combination of Co dots with straight W-nanowire templates opens possibilities of reproducible blockade devices. (C) 2003 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectSINGLE-ELECTRON-
dc.subjectSYSTEM-
dc.subjectMEMORY-
dc.titleCoulomb blockade devices of Co dot arrays on tungsten-nanowire templates fabricated by using only a thin film technique-
dc.typeArticle-
dc.identifier.doi10.1063/1.1571978-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.82, no.20, pp.3535 - 3537-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume82-
dc.citation.number20-
dc.citation.startPage3535-
dc.citation.endPage3537-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000182823300053-
dc.identifier.scopusid2-s2.0-0038319036-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusSINGLE-ELECTRON-
dc.subject.keywordPlusSYSTEM-
dc.subject.keywordPlusMEMORY-
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KIST Article > 2003
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