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Growth of triangular shaped InGaAs/GaAs quantum wire structures

Authors

Kim, SI; Han, IK; Chung, SW; Jagadish, C

Issue Date

2003-03-15

Publisher

SPRINGER

Citation

JOURNAL OF MATERIALS SCIENCE LETTERS, v.22, no.6, pp.467 - 469

Keywords

CHEMICAL-VAPOR-DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; MOCVD; selective epitaxy; quantum wire; InGaAs

ISSN

0261-8028

URI

https://pubs.kist.re.kr/handle/201004/138741

DOI

10.1023/A:1022976131428

Appears in Collections:

KIST Article > 2003

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