Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 mu m

Abstract

We present a demonstration of a waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple-quantum-well structure. The measured switching voltage and current are 4.63 V and 10 muA, respectively. The holding voltage and current are, respectively, 0.59 V and 20 muA. The lasing threshold currents at 25 degreesC and 10 degreesC are 111 mA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561 mum at a bias current equal to 1.41 times threshold. (C) 2003 American Institute of Physics.