Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, HK | - |
dc.contributor.author | Seong, TY | - |
dc.contributor.author | Lim, JH | - |
dc.contributor.author | Ok, YW | - |
dc.contributor.author | Cho, WI | - |
dc.contributor.author | Shin, YH | - |
dc.contributor.author | Yoon, YS | - |
dc.date.accessioned | 2024-01-21T10:08:43Z | - |
dc.date.available | 2024-01-21T10:08:43Z | - |
dc.date.created | 2021-09-01 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/139266 | - |
dc.description.abstract | We have fabricated all solid-state thin-film microsupercapacitors (TFSCs) using RuO2 electrodes and UPON electrolytes. The RuO2 electrodes were grown at oxygen gas flow ratios [O-2/(O-2 +Ar)] of 10% and 30%. Room-temperature charge-discharge measurements show that specific capacitance is dependent on the oxygen gas flow ratio. Glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) results show that the RuO2 electrodes grown at 10% contain nanocrystallites (0.7-10 nm across) embedded in the amorphous matrix, while the electrodes grown at 30% are polycrystalline (with grains of 0.7-15 nm in diameter). Based on the GXRD, TEM, Auger electron spectroscopy depth profile, and scanning electron microscopy results, the oxygen flow ratio dependence of the cycling performance of the RuO2-based TFSCs are discussed in terms of the combined effects of the microstructures of the electrodes, interfacial products, and the surface morphology of the electrodes. (C) 2002 American Vacuum Society. | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | RUTHENIUM OXIDE | - |
dc.title | Correlation between the microstructures and the cycling performance of RuO2 electrodes for thin-film microsupercapacitors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1116/1.1500752 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.20, no.5, pp.1827 - 1832 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 20 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1827 | - |
dc.citation.endPage | 1832 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000178669200005 | - |
dc.identifier.scopusid | 2-s2.0-0036026347 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | RUTHENIUM OXIDE | - |
dc.subject.keywordAuthor | thin film supercapacitor | - |
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