Current-controlled bi-stable domain configurations in Ni81Fe19 elements: An approach to magnetic memory devices
- Authors
- Koo, H; Krafft, C; Gomez, RD
- Issue Date
- 2002-07-29
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.81, no.5, pp.862 - 864
- Abstract
- The discovery of current-switchable bi-stable remanent domain configurations on small ferromagnetic islands is reported. Rectangular NiFe islands with a thickness of 50 to 100 nm and lateral dimensions on the order of several microns were imaged using magnetic force microscopy after application of 10 ns current pulses through the material. The closure configuration can be set into either the 4 or 7 domain configuration by applying positive or negative current polarity at density on the order 10(7) A/cm(2). The chirality of the closure patterns is fixed, implying that only two rather than four states are stable in these patterns. The possibility of using these configurations as a means of storing a logic state for memory applications is discussed. (C) 2002 American Institute of Physics.
- Keywords
- WALL; MAGNETORESISTANCE; WALL; MAGNETORESISTANCE; current-controlled; bi-stable domain
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/139364
- DOI
- 10.1063/1.1495883
- Appears in Collections:
- KIST Article > 2002
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.