Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal
- Authors
- Lee, KI; Lee, JH; Lee, WY; Rhie, KW; Ha, JG; Kim, CS; Shin, KH
- Issue Date
- 2002-02
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.239, no.1-3, pp.120 - 122
- Abstract
- The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magneto resistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be similar to27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300degreesC, reaching similar to46%. TEM images reveal that the interface of Al2O3 layer for the annealed MTJ has changed into a relatively clear morphology, as compared to that for the as-grown MTJ. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the thermal stability of MTJs. (C) 2002 Published by Elsevier Science B.V.
- Keywords
- 300-DEGREES-C; 300-DEGREES-C; magnetic tunnel junction; tunneling magnetoresistance; thermal stability; rapid thermal anneal
- ISSN
- 0304-8853
- URI
- https://pubs.kist.re.kr/handle/201004/139832
- DOI
- 10.1016/S0304-8853(01)00580-7
- Appears in Collections:
- KIST Article > 2002
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.