Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal

Authors
Lee, KILee, JHLee, WYRhie, KWHa, JGKim, CSShin, KH
Issue Date
2002-02
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.239, no.1-3, pp.120 - 122
Abstract
The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magneto resistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be similar to27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300degreesC, reaching similar to46%. TEM images reveal that the interface of Al2O3 layer for the annealed MTJ has changed into a relatively clear morphology, as compared to that for the as-grown MTJ. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the thermal stability of MTJs. (C) 2002 Published by Elsevier Science B.V.
Keywords
300-DEGREES-C; 300-DEGREES-C; magnetic tunnel junction; tunneling magnetoresistance; thermal stability; rapid thermal anneal
ISSN
0304-8853
URI
https://pubs.kist.re.kr/handle/201004/139832
DOI
10.1016/S0304-8853(01)00580-7
Appears in Collections:
KIST Article > 2002
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