Analysis of multi-layer VOx thin film for uncooled IR detectors

Abstract

In this paper, we analyzed multi VOx thin films to use as IR absorbing layer of uncooked IR devices. We used the new structure to fabricate VOx thin film that has improved IR absorbing characteristics. We deposited multi VOx thin films on SiNx by reactive RF magnetron sputtering method with different conditions. We changed the thickness of V and V2O5 thin films and O-2/Ar gas ratio. With this method, we could fabricate multi VOx thin films that have improved IR absorbing characteristics. As the result, of this, we obtained that TCR(Temperature Coefficient of Resistance) value of multi layer VOx thin films was about -2.0 %/K and resistivity was similar to1 Omega cm.