Magnetic properties, structure and shape-memory transitions in Ni-Mn-Ga thin films grown by ion-beam sputtering

Authors
Ahn, JPCheng, NLograsso, TKrishnan, KM
Issue Date
2001-07
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.37, no.4, pp.2141 - 2143
Abstract
Ni1-2xMnxGax (x similar to 0.2 and 0.25) alloys in thin film form were prepared by ion-beam sputtering from alloy targets. For Si(001) substrates the structure/texture of the films are a function of the growth temperature (T-g). The tetragonal martensite structure with a (220) texture was obtained for an optimal T-g similar to 300-350 degreesC. At higher temperatures a cubic silicide (Mn12Ni4Si3) was obtained. At room temperature, optimal films with the stoichiometric composition (x similar to 0.2) showed a ferromagnetic hysteresis behavior characterized by significant in-plane rotation. The coercivity of the films was 310 Oe and temperature-dependent measurements confirmed a Curie temperature, T-c similar to 340 K. At room temperature the films show a modulated 7M martensite structure which was observed in in situ heating experiments to transforms to the cubic austenite phase at 500 degreesC.
Keywords
MARTENSITIC TRANSFORMATIONS; NI2MNGA; ALLOYS; MARTENSITIC TRANSFORMATIONS; NI2MNGA; ALLOYS; ion beam sputtering; magnetic actuation in MEMS; Ni-Mn-Ga; shape memory alloy thin films
ISSN
0018-9464
URI
https://pubs.kist.re.kr/handle/201004/140360
DOI
10.1109/20.951103
Appears in Collections:
KIST Article > 2001
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