DSpace at KIST: 급속열처리산화법으로 형성시킨 SiO₂/나노결정 Si의 전기적 특성 연구

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DC Field	Value	Language
dc.contributor.author	김용	-
dc.contributor.author	박경화	-
dc.contributor.author	정태훈	-
dc.contributor.author	박홍준	-
dc.contributor.author	이재열	-
dc.contributor.author	최원철	-
dc.contributor.author	김은규	-
dc.date.accessioned	2024-01-21T12:33:47Z	-
dc.date.available	2024-01-21T12:33:47Z	-
dc.date.created	2022-01-10	-
dc.date.issued	2001-04	-
dc.identifier.issn	1225-8822	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/140540	-
dc.language	Korean	-
dc.publisher	한국진공학회	-
dc.title	급속열처리산화법으로 형성시킨 SiO₂/나노결정 Si의 전기적 특성 연구	-
dc.title.alternative	Electrical properties of metal-oxide-semiconductor structures containing Si nanocrystals fabricated by rapid thermal oxidation process.	-
dc.type	Article	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	한국진공학회지, v.10, no.1, pp.44 - 50	-
dc.citation.title	한국진공학회지	-
dc.citation.volume	10	-
dc.citation.number	1	-
dc.citation.startPage	44	-
dc.citation.endPage	50	-
dc.description.isOpenAccess	N	-
dc.description.journalRegisteredClass	other	-
dc.subject.keywordAuthor	급속열처리산화	-

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