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dc.contributor.authorCho, J-
dc.contributor.authorHan, S-
dc.contributor.authorLee, Y-
dc.contributor.authorKim, OK-
dc.contributor.authorKim, GH-
dc.contributor.authorKim, YW-
dc.contributor.authorLim, H-
dc.contributor.authorJung, HS-
dc.date.accessioned2024-01-21T12:36:09Z-
dc.date.available2024-01-21T12:36:09Z-
dc.date.created2021-09-05-
dc.date.issued2001-04-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140583-
dc.description.abstractUltrashallow p(+)/n junctions fabricated by plasma source ion implantation (PSII) were studied. After as-implanted samples were spike-annealed at 1000 degreesC and annealed for 5 sat 1000 degreesC, for samples with a background doping concentration of 6x10(17)#/cm(3), ultrashallow junction depths of 548 Angstrom and 745 Angstrom, respectively, could be obtained with an implant energy of 0.5 keV. Also, sheet resistances of 330 Omega/rectangle and 228 Omega/rectangle were acquired, respectively. These junction depths and sheet resistances obtained by the PSII process were found to satisfy 0.15 mum metal oxide semiconductor field effect transistor (MOSFET) applications.-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.subjectTRANSIENT ENHANCED DIFFUSION-
dc.subjectSILICON-
dc.subjectBORON-
dc.titlePlasma source ion implantation for ultrashallow junctions: Low energy and high dose rate-
dc.typeArticle-
dc.identifier.doi10.1143/JJAP.40.2506-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.4A, pp.2506 - 2507-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.citation.volume40-
dc.citation.number4A-
dc.citation.startPage2506-
dc.citation.endPage2507-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000170771700080-
dc.identifier.scopusid2-s2.0-0035302364-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusTRANSIENT ENHANCED DIFFUSION-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusBORON-
dc.subject.keywordAuthorplasma source ion implantation-
dc.subject.keywordAuthorultrashallow junction-
dc.subject.keywordAuthorjunction depth-
dc.subject.keywordAuthor0.15 mu m MOSFET-
dc.subject.keywordAuthorbackground doping concentration-
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