Dependence of buffer layer on the distribution of InAs quantum dots

Abstract

We have investigated the dependence of the distributions of InAs quantum dots on the thickness of GaAs buffer layers grown on 2 degrees -off (100) GaAs substrates by metalorganic chemical vapor deposition. When the thickness of the GaAs buffer layers was changed from 7 ML to 70 ML, the terrace widths were transformed from 25 nm to 75 nm due to the bunching effects of Ga adatoms. The magnitudes of the size and the density of InAs quantum dots on 2 degrees -off GaAs (100) substrates, whose terrace widths, were changed by the thickness of the GaAs buffer layer, were successfully manipulated. Wire-shaped InAs quantum dots could also be fabricated by controlling the size and the density of the quantum dots.