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dc.contributor.authorPark, JS-
dc.contributor.authorIm, YH-
dc.contributor.authorChoi, RJ-
dc.contributor.authorHahn, YB-
dc.contributor.authorChoi, CS-
dc.contributor.authorLee, SH-
dc.contributor.authorLee, JK-
dc.date.accessioned2024-01-21T12:45:09Z-
dc.date.available2024-01-21T12:45:09Z-
dc.date.created2021-09-05-
dc.date.issued2001-02-
dc.identifier.issn1099-0062-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140742-
dc.description.abstractSrBi2Ta2O9 (SBT) thin films were etched in a planar type inductively coupled plasma (ICP) etcher with different chemistries of Cl-2/Ar, Cl-2/NF3/Ar, and Cl-2/NF3/O-2/Ar. The etch rate was a strong function of gas concentration, ICP source power, and rf chuck power. Cl-2/NF3/Ar and Cl-2/NF3/O-2/Ar plasmas showed maximum etch rates of similar to 1600 Angstrom /min at 5 mTorr, 700 W ICP power, and 150 W rf chuck power. Electrical properties of the SBT films were dependent on the plasma chemistry employed; Cl-2/NF3/O-2/Ar showed the least damage in the films and resulted in the best overall P-E hysteresis loops compared to other chemistries. (C) 2001 The Electrochemical Society.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectGAN-
dc.subjectINN-
dc.titlePlasma chemistries for dry etching of SrBi2Ta2O9 thin films-
dc.typeArticle-
dc.identifier.doi10.1149/1.1340917-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTROCHEMICAL AND SOLID STATE LETTERS, v.4, no.2, pp.G17 - G19-
dc.citation.titleELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.citation.volume4-
dc.citation.number2-
dc.citation.startPageG17-
dc.citation.endPageG19-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000167325800011-
dc.identifier.scopusid2-s2.0-0035262728-
dc.relation.journalWebOfScienceCategoryElectrochemistry-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaElectrochemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusINN-
dc.subject.keywordAuthordry etching-
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