The loss kinetics of substitutional carbon in Si1-xCx regrown by solid phase epitaxy

Authors
Kim, YJKim, TJKim, TKPark, BSong, JH
Issue Date
2001-02
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.40, no.2A, pp.773 - 776
Abstract
Epitaxial layers of Si1-xCx (x = 0.016) were synthesized using ion implantation and solid phase epitaxy (SPE), and the loss kinetics of substitutional carbon was investigated. As annealing temperature and time increase, more carbon atoms were found to diffuse from substitutional to interstitial sites. The activation energy for the loss of substitutional carbon into interstitial sites was obtained over the temperature range, 700-1040 degreesC, using both high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared spectroscopy (FTIR). Both methods yielded similar activation energies (similar to3 eV) for the loss kinetics. In addition, SPE layers regrown by rapid thermal annealing (RTA) were shown to have better crystalline quality than those regrown by furnace annealing.
Keywords
HETEROJUNCTION BIPOLAR-TRANSISTORS; SIGEC ALLOYS; SILICON; SI; HETEROSTRUCTURES; GROWTH; OPTOELECTRONICS; IMPLANTATION; LAYERS; HETEROJUNCTION BIPOLAR-TRANSISTORS; SIGEC ALLOYS; SILICON; SI; HETEROSTRUCTURES; GROWTH; OPTOELECTRONICS; IMPLANTATION; LAYERS; Si1-xCx; SPE; substitutional carbon; activation energy; loss kinetics
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/140763
DOI
10.1143/JJAP.40.773
Appears in Collections:
KIST Article > 2001
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE