Atomic structure of ultrathin Co layer on Si(001)(2 x 1) at room temperature

Abstract

The atomic structure of Co on the Si(001)(2 x 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Angstrom and 3.47 Angstrom from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HE and T3 sites, of which the latter is at a height of 3.58 Angstrom from the second layer of the Si(001) surface. (C) 2000 Elsevier Science B.V. All rights reserved.