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dc.contributor.authorChoi, SG-
dc.contributor.authorKim, YD-
dc.contributor.authorYoo, SD-
dc.contributor.authorAspnes, DE-
dc.contributor.authorWoo, DH-
dc.contributor.authorKim, SH-
dc.date.accessioned2024-01-21T14:16:10Z-
dc.date.available2024-01-21T14:16:10Z-
dc.date.created2021-09-05-
dc.date.issued2000-02-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/141578-
dc.description.abstractWe report optical properties of AlxGa1-xP (0 less than or equal to x less than or equal to 0.52) alloys grown by gas source molecular-beam epitaxy on S-doped GaP(001) substrates. Room-temperature pseudodielectric function spectra from 1.5 to 6.0 eV were obtained by spectroscopic ellipsometry. By applying the parabolic-band critical point model to numerically calculated second energy derivatives of these spectra, we obtained accurate room-temperature values of the E-1, E-0', E-2, and E-2' critical point energies and their dependence on composition x. (C) 2000 American Institute of Physics. [S0021-8979(00)01003-3].-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectDIELECTRIC FUNCTION-
dc.subjectTEMPERATURE-DEPENDENCE-
dc.subjectINTERBAND-TRANSITIONS-
dc.subjectALGAP ALLOYS-
dc.subjectGAP-
dc.subjectGROWTH-
dc.subjectSILICON-
dc.subjectGAAS-
dc.titleOptical properties of AlxGa1-xP (0 <= x <= 0.52) alloys-
dc.typeArticle-
dc.identifier.doi10.1063/1.372011-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.87, no.3, pp.1287 - 1290-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume87-
dc.citation.number3-
dc.citation.startPage1287-
dc.citation.endPage1290-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000084822400042-
dc.identifier.scopusid2-s2.0-0002234961-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusDIELECTRIC FUNCTION-
dc.subject.keywordPlusTEMPERATURE-DEPENDENCE-
dc.subject.keywordPlusINTERBAND-TRANSITIONS-
dc.subject.keywordPlusALGAP ALLOYS-
dc.subject.keywordPlusGAP-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusGAAS-
dc.subject.keywordAuthorellipsometry-
dc.subject.keywordAuthorAlGaP-
dc.subject.keywordAuthorGSMBE-
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