Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys

Authors
Choi, SGKim, YDYoo, SDAspnes, DEWoo, DHKim, SH
Issue Date
2000-02-01
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.87, no.3, pp.1287 - 1290
Abstract
We report optical properties of AlxGa1-xP (0 less than or equal to x less than or equal to 0.52) alloys grown by gas source molecular-beam epitaxy on S-doped GaP(001) substrates. Room-temperature pseudodielectric function spectra from 1.5 to 6.0 eV were obtained by spectroscopic ellipsometry. By applying the parabolic-band critical point model to numerically calculated second energy derivatives of these spectra, we obtained accurate room-temperature values of the E-1, E-0&apos;, E-2, and E-2&apos; critical point energies and their dependence on composition x. (C) 2000 American Institute of Physics. [S0021-8979(00)01003-3].
Keywords
MOLECULAR-BEAM EPITAXY; DIELECTRIC FUNCTION; TEMPERATURE-DEPENDENCE; INTERBAND-TRANSITIONS; ALGAP ALLOYS; GAP; GROWTH; SILICON; GAAS; MOLECULAR-BEAM EPITAXY; DIELECTRIC FUNCTION; TEMPERATURE-DEPENDENCE; INTERBAND-TRANSITIONS; ALGAP ALLOYS; GAP; GROWTH; SILICON; GAAS; ellipsometry; AlGaP; GSMBE
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/141578
DOI
10.1063/1.372011
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KIST Article > 2000
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