Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, DJ | - |
dc.contributor.author | Ju, BK | - |
dc.contributor.author | Jang, J | - |
dc.contributor.author | Lee, KB | - |
dc.contributor.author | Oh, MH | - |
dc.date.accessioned | 2024-01-21T14:43:23Z | - |
dc.date.available | 2024-01-21T14:43:23Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 1999-12 | - |
dc.identifier.issn | 0960-1317 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/141807 | - |
dc.description.abstract | This paper presents a study of the anodic bonding technique using a hydrophilic surface. Our method differs from conventional processes in the pre-treatment of the wafer. Hydrophilic surfaces were achieved from dipping in H2O/H2O2/NH4OH solution. The hydrophilic surface has a large number of -OH groups, which can form hydrogen bonds when two wafers are in contact. This induces a higher electrostatic force, because of the decreasing gap between the glass and silicon wafer. We achieved improved properties, such as a wider bonded area and a higher bond strength than those of conventional methods. Also, the fabricated pressure sensors on the 5-inch silicon wafer were bonded to Pyrex #7740 glass of 3 mm thickness. In order to investigate the migration of the sodium ions, the depth profile at the glass surface by secondary-ion mass spectroscopy and the bonding current were compared with that of conventional methods. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | SILICON | - |
dc.title | Effects of a hydrophilic surface in anodic bonding | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/0960-1317/9/4/305 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MICROMECHANICS AND MICROENGINEERING, v.9, no.4, pp.313 - 318 | - |
dc.citation.title | JOURNAL OF MICROMECHANICS AND MICROENGINEERING | - |
dc.citation.volume | 9 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 313 | - |
dc.citation.endPage | 318 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000084491500005 | - |
dc.identifier.scopusid | 2-s2.0-0033345095 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordAuthor | MEMS | - |
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