Improvement of field-emission properties by formation of Nb-silicide layer on silicon-tip FEAs

Abstract

Metal silicide on silicon-tip field-emission arrays (FEAs) seems to be a promising way to improve the performance of the silicon-tip FEAs. The niobium-silicide layer was formed on a silicon surface. The Nb-silicide FEAs were prepared by a silicidation process. The formation of the Nb-silicide layer on a silicon surface was confirmed by using X-ray diffractometry (XRD). The current-voltage characteristics and the current fluctuation were measured under an ultra-high-vacuum environment using a Kiethley SMU 237 meter. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47 V by the formation of the Nb-silicide layer on silicon tips, and the emission current fluctuation (2%) was more stable than that of conventional silicon-tip FEAs.