Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chai, KH | - |
dc.contributor.author | Heo, NH | - |
dc.contributor.author | Na, JG | - |
dc.contributor.author | Jeong, HT | - |
dc.contributor.author | Lee, SR | - |
dc.date.accessioned | 2024-01-21T15:07:22Z | - |
dc.date.available | 2024-01-21T15:07:22Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 1999-09 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/141964 | - |
dc.description.abstract | During final annealing at 1200 degrees C under a high vacuum, changes in recrystallization texture with final annealing time were observed in thin-gauged 3% Si-Fe alloys. In the alloy containing 30 ppm bulk sulfur, the recrystallization texture varied from the {111} <uvw> to the {001} <uvw> and finally to the {110} <001> Goss texture, resulting in higher magnetic induction than 1.90 T. The trough in magnetic induction, which corresponds to the relatively high surface-segregated sulfur range, is due to the magnetically detrimental effect of those textures, i.e. the {111} <uvw> and the {001} <uvw>. In the alloy containing 6 ppm bulk sulfur, the correlation between magnetic induction and surface-segregated sulfur was the same as that in the other alloy. These results clearly indicate that the surface energy induced recrystallization in the thin-gauged 3% Si-Fe alloys is strongly affected by the segregation and the evaporation of sulfur. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SURFACE SEGREGATION | - |
dc.title | Effects of segregated sulfur on recrystallization texture and magnetic induction in thin-gauged 3% silicon steel | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/20.800528 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MAGNETICS, v.35, no.5, pp.3373 - 3375 | - |
dc.citation.title | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.volume | 35 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 3373 | - |
dc.citation.endPage | 3375 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000083151500046 | - |
dc.identifier.scopusid | 2-s2.0-0033184068 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | SURFACE SEGREGATION | - |
dc.subject.keywordAuthor | sulfur segregation | - |
dc.subject.keywordAuthor | surface energy | - |
dc.subject.keywordAuthor | recrystallization | - |
dc.subject.keywordAuthor | 3% Si-Fe | - |
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