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dc.contributor.author주병권-
dc.contributor.author이상조-
dc.contributor.author김훈-
dc.contributor.author이윤희-
dc.contributor.author오명환-
dc.date.accessioned2024-01-21T15:10:05Z-
dc.date.available2024-01-21T15:10:05Z-
dc.date.created2022-01-10-
dc.date.issued1999-08-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142012-
dc.publisher대한전기학회-
dc.titleDecrease of gate leakage current by employing Al sacrificial layer in the DLC-coated Si-tip FEA fabrication-
dc.title.alternativeDLC-coated Si-tip FEA 제조에 있어서 Al 희생층을 이용한 게이트 누설 전류의 감소-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation대한전기학회논문지 : 전기물성,응용부문 C = The Transactions of The Korean Institute of Electrical Engineers, v.48C, no.8, pp.577 - 579-
dc.citation.title대한전기학회논문지 : 전기물성,응용부문 C = The Transactions of The Korean Institute of Electrical Engineers-
dc.citation.volume48C-
dc.citation.number8-
dc.citation.startPage577-
dc.citation.endPage579-
dc.subject.keywordAuthorFED-
dc.subject.keywordAuthorSi-tip field emitter-
dc.subject.keywordAuthorDLC-
dc.subject.keywordAuthorgate-leakage current-
dc.subject.keywordAuthorsacrificial layer-
dc.subject.keywordAuthorfield emission-
dc.subject.keywordAuthorfield emission display-
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