Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

Abstract

Planar-type quantum-dot devices have been fabricated and characterized. Aluminum metal electrodes with interelectrode spacing of 30 nm have been deposited on an InAs self-assembled quantum-dot wafer to form the quantum-dot devices. The current-voltage characteristics measured from the devices, in which a single quantum dot is placed in between the electrodes, exhibit negative differential resistance effects at the temperature above 77 K. They are interpreted as due to three-dimensional-zero-dimensional resonant tunneling through the InAs self-assembled quantum dot. (C) 1999 American Institute of Physics. [S0003-6951(99)03734-1].