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dc.contributor.authorYoo, KS-
dc.contributor.authorOh, YJ-
dc.contributor.authorKim, TS-
dc.contributor.authorYoon, YS-
dc.contributor.authorKim, CK-
dc.date.accessioned2024-01-21T15:15:27Z-
dc.date.available2024-01-21T15:15:27Z-
dc.date.created2021-09-04-
dc.date.issued1999-07-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142105-
dc.description.abstractWO3 thin-film sensors were deposited by using a high-vacuum resistance heating evaporator at ambient temperature and at 300 degrees C, and then annealed at 500 degrees C for 4 hours in air. The annealed WO3 films had a polycrystalline triclinic structure. In the case of the films deposited at 300 degrees C, the microstructure of the annealed films, the NOx sensitivities, and the response characteristics were improved.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectSEMICONDUCTORS-
dc.subjectSENSITIVITY-
dc.subjectCO-
dc.titleEffect of the microstructure on the NOx gas-sensing characteristics of WO3 thin-film sensors-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S420 - S423-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume35-
dc.citation.startPageS420-
dc.citation.endPageS423-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000081827900089-
dc.identifier.scopusid2-s2.0-19544379554-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusSENSITIVITY-
dc.subject.keywordPlusCO-
dc.subject.keywordAuthorNOx sensor-
dc.subject.keywordAuthorWO3 thin films-
dc.subject.keywordAuthorgas sensor-
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